Physical Characteristics
- Chemical nameAluminum, trimethyl-
- CAS No75-24-1
- Molecular Weight72.1 g/mol
- AppreanceLiquid
- ColorColorless
- Boiling point125℃
- Viscosity0.9 cP at 30℃
High-k dielectric materials are highly reactive and reactive precursors suitable for the Atomic Layer Deposition process of high-k metal oxide films.
High-k dielectric films are effective gate oxide & capacitor dielectric precursors for Memory and Logic Device Applications.
Si is the most commonly-used element in semiconductor industry, and silicon containing materials are used in
various parts of semiconductor devices. Silicon-containing films such as insulating layer, etch stopper, hard mask, spacer and
double patterning dielectrics, require high quility conformal deposition process at low thermal buget.
Transition metal & metal nitrides are widely used in technology because of their hardness,
stability at high temperature, chemical inertness and stability, electrical and optical properties.
These properties make them the materials of choice for diffusion barrier in microelecronic applications.
UP Chemical can serve special process & cleaning chemical for semiconductor and display industry.
Organic light-emitting diodes (OLDEs) are becoming more important for use in flexible displays.
However, the organic materials used in OLED displays are very sensitive to water vapor and oxygen.
Making it important to develop a thin-film encapsulation layer suitable for flexible displays.