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UP Chemical Co.,Ltd.

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      • Capacitor & Gate High-k 
Dielectrics
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Gate Elctrode
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      • Spin-on Dielectric
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Home> Á¦Ç°Á¤º¸ > ¿ëµµº°ºÐ·ù > ¹ÝµµÃ¼¿ë > Spin-on Dielectric

Ceramable¢ç 560 [Ceramable¢ç 560]

Physical Characteristics
Description ¹ÝµµÃ¼¿ë Spin-on Dielectric Àç·á´Â SiO2 ¹Ú¸· Á¦Á¶ °øÁ¤¿¡ Àû¿ëµÇ´Â ÄÚÆà ¹°Áú·Î, ¹ÝµµÃ¼ÀÇ Àý¿¬¸·À» Çü¼ºÇÏ´Â ¹°ÁúÀÔ´Ï´Ù.
±âÁ¸¿¡´Â CVD(Chemical Vapor Deposition) °øÁ¤À» ÀÌ¿ëÇÏ¿© SiO2 ¹Ú¸·À» ¸¸µé¾úÀ¸³ª, ¹ÝµµÃ¼ ÁýÀûȸ·Î ¼ÒÀÚÀÇ ¹Ì¼¼È­, °íÁýÀûÈ­°¡ ºü¸£°Ô ÁøÇàµÊ¿¡ µû¶ó 70nm ÀÌÇÏ±Þ device¿¡¼­ A/R(aspect ratio)ÀÇ Áõ°¡·Î ÀÎÇÑ gap-fill margin ºÎÁ·À¸·Î void ¹ß»ý¿¡ µû¶ó spin coating °øÁ¤À» Àû¿ëÇÏ°Ô µÇ¾ú½À´Ï´Ù.
Áø°ø ÁõÂø °øÁ¤¿¡ ºñÇØ »ý»ê¼º Çâ»ó°ú ¼³ºñÅõÀÚ ºñ¿ë Àý°¨À» °¡´ÉÇÏ°Ô ÇØ ÁÖ´Â Àç·áÀÔ´Ï´Ù.
Advantage Excellent gap-filling without void
Excellent surface planarity
Very low defect density
High cracking threshold
Controllable film thickness
Strong adhesion to substrate
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