Ceramable¢ç 560 [Ceramable¢ç 560]
Physical Characteristics
Description |
¹ÝµµÃ¼¿ë Spin-on Dielectric Àç·á´Â SiO2 ¹Ú¸· Á¦Á¶ °øÁ¤¿¡ Àû¿ëµÇ´Â ÄÚÆà ¹°Áú·Î, ¹ÝµµÃ¼ÀÇ Àý¿¬¸·À» Çü¼ºÇÏ´Â ¹°ÁúÀÔ´Ï´Ù. |
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±âÁ¸¿¡´Â CVD(Chemical Vapor Deposition) °øÁ¤À» ÀÌ¿ëÇÏ¿© SiO2 ¹Ú¸·À» ¸¸µé¾úÀ¸³ª, ¹ÝµµÃ¼ ÁýÀûȸ·Î ¼ÒÀÚÀÇ ¹Ì¼¼È, °íÁýÀûÈ°¡ ºü¸£°Ô ÁøÇàµÊ¿¡ µû¶ó 70nm ÀÌÇÏ±Þ device¿¡¼ A/R(aspect ratio)ÀÇ Áõ°¡·Î ÀÎÇÑ gap-fill margin ºÎÁ·À¸·Î void ¹ß»ý¿¡ µû¶ó spin coating °øÁ¤À» Àû¿ëÇÏ°Ô µÇ¾ú½À´Ï´Ù. |
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Áø°ø ÁõÂø °øÁ¤¿¡ ºñÇØ »ý»ê¼º Çâ»ó°ú ¼³ºñÅõÀÚ ºñ¿ë Àý°¨À» °¡´ÉÇÏ°Ô ÇØ ÁÖ´Â Àç·áÀÔ´Ï´Ù. |
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Advantage |
Excellent gap-filling without void |
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Excellent surface planarity |
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Very low defect density |
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High cracking threshold |
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Controllable film thickness |
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Strong adhesion to substrate |
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